Dependence of quantum dot solar cell parameters on the number of quantum dot layers

نویسندگان

چکیده

We report the theoretical results of improved solar cell efficiency form InAs quantum dots (QDs) embedded in intrinsic region n-i-p GaAs structure. The effect QD layers on parameters is explained detail. For 250, we obtained a maximum 27.4%. Increasing number beyond optimum value resulted decrease efficiency. presence structure significant rise short circuit current density from 33.4 mA/cm2 without to 45.4 QD. At same time, increased 20.5% 27.4% with

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ژورنال

عنوان ژورنال: AIP Advances

سال: 2023

ISSN: ['2158-3226']

DOI: https://doi.org/10.1063/5.0145361